고려대학교

초록/요약

High resolution dopant profiling in semiconductor device has been an intense research topic because of its practical importance in semiconductor industry. Although several techniques have already been developed, it still requires extremely expensive tools to achieve nanometer scale resolution. In this study we demonstrated a novel dopant profiling technique with nanometer resolution using very simple setup. The newly developed technique measures the thermoelectric voltage generated in the contact point of the SPM prove tip and MOSFET surface instead of electrical signals widely adopted in previous techniques like Scanning Capacitance Microscopy. The spatial resolution of our measurement technique is limited by the size of contact size between SPM probe tip and MOSFET surface. Experiment results were compared with theoretical analysis to estimate the contact size.