MEMS 기술을 이용한 마이크로 써모파일 : Micro Thermopile Using MEMS Technology
- 발행기관 고려대학교 대학원
- 발행년도 2004
- 학위명 박사
- 학과 대학원:바이오마이크로시스템기술협동과정
- 식별자(기타) DL:000014914206
- 서지제어번호 000045212218
초록/요약
The thermocouple was discovered in 1826 by the Russian-Born German physicist, J. Seebeck. He discovered that at the junction of two dissimilar conductors a voltage could be generated by a change in temperature. Using this effect Melloni produced the first thermopile detector in 1833, to investigate the infrared spectrum. If blackbody irradiates infrared , blackbody converts optical energy into thermal energy. Then temperature of blackbody increases. Hence, temperature difference happens between hot junction and cold junction. The potential difference across a piece of metal generates due to a temperature difference. There are several methods to increase output of thermopile. First method uses a large Seebeck coefficient materials. Second method uses a large infrared absorption. Third method enlarges a temperature difference between hot junction and cold junction. Forth method increases the number of thermocouples. This paper suggests fixing the number of thermocouples for increasing output voltage, instead of increasing the number of thermocouples. Hence, this study changes pattern of aluminium and Poly-Si on hot and cold junction. Aluminium patterns are made square and hollow shape on hot junction. Poly-Si patterns are made square and meander shape on cold junction. And each pattern mix. Then mask patterns become four. When aluminium pattern is hollow shape, generated voltage of device is between 0.097㎷ and 3.784 ㎷ at temperature range between 100℃ and 500℃. The result shows that Seebeck coefficient is 9.218㎶/℃. But when aluminium pattern is square shape, thermopile voltage generate between 0.091㎷ and 3.099㎷ at same temperature range. Seebeck coefficient is 7.495㎶/℃. And at cold junction, device of meander shape generates between 0.242㎷ and 8.052㎷. Seebeck coefficient is 19.525㎶/℃. But when Poly-Si pattern is square, generated voltage is between 0.157㎷ and 7.403㎷. and Seebeck coefficient is 18.115㎶/℃. Also, device with blackbody absorption layer generates 7.4㎷
more목차
1. 서 론 1
1.1 센서의 정의 1
1.2 역사적 배경 1
1.3 써모파일의 응용 분야 2
2. 이 론 3
2.1 적외선 3
2.2 지벡 효과 4
2.3 마이크로머시닝 8
3. 벤 치 마 킹 18
3.1 Perkin Elmer TPS-434 19
3.2 GE Thermometrics ZTP-135 23
4. 제 작 공 정 25
4.1 마스크 제작 25
4.2 소자 제작 공정 30
5. 측 정 결 과 36
5.1 측정 장치 36
5.1.1 적외선 측정 장치 36
5.1.2 Khantal 히터 특성 38
5.1.3 OP-AMP 특성 39
5.2 실 험 결 과 43
5.2.1 Poly-Si과 알루미늄 두께 43
5.2.2 냉접점의 접촉저항 측정 44
5.2.3 후면이방성 식각 46
5.2.4 기존 써모파일 특성측정 47
5.2.5 열접점과 냉접점 모양 변화에 따른 특성변화 48
5.2.6 흑체 유무에 따른 출력 전압 51
5.2.7 설계한 써모파일의 출력 특성 52
6. 결 론 53
