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A 16Mbps (VFIR) CMOS Optical Receiver for Infrared Data Communications : A 16Mbps (VFIR) CMOS Optical Receiver for Infrared Data Communications

  • 발행기관 고려대학교
  • 발행년도 2008
  • 학위수여년월 2008. 2
  • 학위명 석사
  • 학과 대학원 마이크로/나노시스템협동과정 마이크로/나노시스템협동과정전공
  • 식별자(기타) DL:000018611737
  • 서지제어번호 000045435901

초록/요약

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초록/요약

As the demands for the high data rate and low cost transceiver in mobile devices increase, infrared data communication, that is, IrDA has come into the spotlight. However, since infrared light is essentially unable to travel through physical obstacles, most of applications are limited within a short-range of one meter. Despite of these weaknesses, IrDA is now occupying an important part in mobile application due to an infrared link freed from the electromagnetic interferences. Moreover, the circuit implementation using CMOS technology will lower the cost of production. In addition, the needs for IrDA with high data rate have increased in recent years and it has been required that new IrDA system which will be superior to the existing SIR (115.2kbps), MIR (1.152Mbps) and FIR(4Mbps) should be developed. In this study, a 16Mbps, VFIR (Very Fast Infrared), optical receiver for infrared data communications implemented in 0.18um 1-poly 4-metal CMOS technology is presented. To achieve wide bandwidth receiver for the high data rate of 16Mbps and low noise performance for very low BER (Bit Error Rate) specification, we employ the RGC (Regulated Cascode) structure as an input stage. The RGC input stage with low noise design ensures higher SNR (Signal to Noise Ratio) in the back end of an input stage. And to obtain better performance, the scheme rejecting ambient light noise, AGC (Automatic Gain Control) loop and the scheme compensating the pulse width drooped by the bandwidth limitation are embedded in the receiver system. The simulation results using H-SPICE show that the input-referred current noise is 4.2pA/√Hz at more than 16MHz bandwidth and the total receiver system dissipates a power of 6.3mW at 1.8V supply voltage. The active area of this system is 0.12mm².

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