검색 상세

Fabrication and Analysis of Optical Properties of electroless-etched Top-down Silicon Nanowire Arrays

초록/요약

We fabricated electroless-etched silicon nanowire arrays with Polystyrene beads(200nm). A number of recent studies have shown that silicon nanowire arrays with Ag catalyst is of particular interest because of its mass productivity, short experiment time, low energy consumption and applications such as solar cells, transistor, biosensor, thermoelectric material, battery etc. Two methods were used for this work. One is a fabrication of randomly etched silicon nanowire arrays using only Ag film. Another is a fabrication of more uniform silicon nanowire arrays using PS beads which provide regular pattern of silicon nanowire arrays. The purpose of my work was to fabricate electroless-etched silicon nanowire arrays using PS beads and to analyze the optical properties of silicon nanowire arrays using PS beads and silicon nanowire arrays using only Ag. It was found that silicon nanowire arrays show low reflectance ranging from 300nm to 800nm. Also each arrays results in different optical property and morphology. The morphology of silicon nanowire arrays was analyzed by Scanning electron microscope, Atomic force microscope. The reflectance was measured by UV visible spectroscopy.

more

목차

Chapter 1 Introduction = 1
Chapter 2 Theoretical Background = 7
2-1 Solar Cells = 7
2-1-1. The Operation Principle of Solar Cells = 7
2-1-2. I-V Characteristic of Solar Cells = 9
2-1-3. Characteristic of Solar Cells = 12
2-1-4. Factors on Solar Cells Performance = 14
2-1-5. Application for Solar cells = 17
2-1-6. Nanosphere Lithography = 20
2-1-7. The etching mechanism of Silicon nanowire with Ag catalysts = 22
Chapter 3. Experiment = 24
3-1. Fabrication of Silicon Nanowire Arrays without Polystyrene Beads Lithography = 24
3-2. Fabrication of Silicon Nanowire arrays with Polystyrene Beads Lithography = 25
Chapter 4. Results and Discussion = 26
4-1. Fabrication and analysis of SiNW Arrays without PS Beads Lithography = 26
4-1-1. SEM images of Ag surface and SiNW arrays fabricated without PS beads lithography = 27
4-1-2. TEM images of SiNW arrays fabricated without PS beads lithography = 29
4-1-3. Optical property of SiNW arrays fabricated without PS beads lithography = 30
4-1-4. Fabrication of SiNW arrays with different wafer ( doping level, orientation) = 34
4-1-5. Fabrication of rectangular SiNWs = 37
4-2. Fabrication and analysis of SiNW Arrays with PS Beads Lithography = 39
4-2-1. Monolayer of PS beads and fabrication of SiNW arrays with PS beads lithography = 39
4-2-2. New method for reducing defects on SiNWs fabricated with PS beads lithograpy = 47
Chapter 5. Conclusion = 51
Chapter 6. Acknowledgement = 52
References = 58

more