Nanocrystal-based Flexible Optoelectronic and Electronic Devices
- 주제(키워드) Nanocrystal , Flexible , Memory , HgTe , HgSe
- 발행기관 고려대학교 대학원
- 지도교수 김상식
- 발행년도 2008
- 제출일 2008-07-01
- 학위수여년월 2008. 8
- 학위명 석사
- 학과 일반대학원 전자전기공학과
- 원문페이지 98 p
- 본문언어 영어
- 제출원본 000045503918
초록/요약
In this thesis, HgTe and HgSe nanocrystal (NCs)-based optoelectronic and electronics devices were fabricated on flexible substrates and their optoelectronics and electrical properties were investigated. HgTe and HgSe NCs were synthesized by colloidal methods were characterized by X-ray diffraction, high resolution transmission electron microscopy, photoluminescence, absorption, and Raman spectroscopy. In chapter 1, properties of NCs as promising materials for flexible devices are explained. Chapter 2 deals with the synthesis of solution processable NCs, and fabrication of devices on flexible substrates. Thin film transistors with channels composed of solution processable HgTe NCs are fabricated on transparent and flexible substrates and their characteristics are examined in. Also, inverter logic gate consisted of two HgTe NC-based p-type thin film transistors, floating gate memory devices with solution processable Pt NCs, and optoelectronic devices made from solution processable HgSe NCs are investigated. In addition, complementary inverter consisted of HgTe NC-based and HgSe NC-based transistor is fabricated on flexible substrates. In conclusion, solution-processable NCs are candidates for next generation flexible optoelectronic and electronic devices owing to their promising high performances and low sintering process without any deformation of plastic substrates.
more목차
1. Introduction 1
1.1. Flexible Devices 2
1.2. Applications of Nanocrystals 6
1.3. Nanocrystals as Candidates for Flexible Devices 10
2. Synthesis of HgTe and HgSe Nanocrystals by Colloidal Methods and Device Fabrications 12
2.1. Synthesis of HgTe and HgSe Nanocrystals by Colloidal Methods 13
2.2. Preparation and Device Fabrications 18
2.3. Fabrications of HgTe Nanocrystal-based Flexible TFTs 25
2.4. Fabrications of Inorganic Nanocrystal-based Flexible Inverter and Floating Gate Memory Devices 27
2.5. Fabrication of HgSe Nanocrystal-based Flexible Photodetectors 32
2.6. Fabrication of HgTe and HgSe Nanocrystal-based Flexible Complementary Inverters 34
3. Results and Discussions 37
3.1. Transparent and Flexible Thin-film Transistors with Channels Layers Composed of Sintered HgTe Nanocrystals 38
3.2. Inverter Logic Gate Device-based on a Sintered HgTe Nanocrystal Channel Layer and Pt NC-based Flexible Memory Devices 48
3.3. Photocurrent Characteristics of Closed-packed HgSe Nanocrystal-based Films 62
3.4. HgTe and HgSe Nanocrystal-based Flexible Complementary Inverters 72
4. Summary 84
